"These discoveries have offered various options in term of materials for the DW conduit layer in high-performance devices. candidate at IMEC who carried out the study said.
"Over the past decade, research mainly focused on exploring novel physical mechanisms in different materials to enable fast DW motion," Eline Raymenants, a Ph.D. The first is responsible of generating DWs onto magnetic tracks (i.e., the writing process), the second of transporting DWs from the input to the output along the DW conduit layer (i.e., the transporting process), and the last of using the output to detect the arrival of a DW (i.e., the reading process). These include racetrack memory, spin logic and neuromorphic computing devices.ĭW devices generally have three main components, each with a specific function. Over the past few years, electronics engineers developed a variety of different DW-based devices with ultra-high storage densities, low power consumption and flexible designs. "The key feature of these devices is that the motion of DWs can be transported in an arbitrary form of a magnetic track."
"In DW-based devices, input information is encoded into a magnetic domain in a magnetic track and the device is then operated using the motion of DWs along the magnetic track," Van Dai Nguyen, a researcher at IMEC who led the study, told TechXplore. The write/read components could achieve performances comparable to those of existing magnetic random-access memory technology, while the fast DW motion between MTJs can be controlled by spin orbit torque. The devices, presented in a paper published in Nature Electronics, consist of multiple MTJs magnetically interconnected by a nanotrack. Researchers at IMEC in Belgium have recently developed new DW devices with perpendicular magnetic tunnel junction (MTJs) as write/read components.
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